III-Nitride Semiconductor Optoelectronics, Volume 96 1st Edition

III-Nitride Semiconductor Optoelectronics, Volume 96 1st Edition

: ELSEVIER

: 9780128095843

: Book

$245.00

Description

III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.

Key Features

  • Contains the latest breakthrough research in III-nitride optoelectronics
  • Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices
  • Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

Readership

Students and researchers in the field of semiconductors. Researchers and engineers in the field of III-nitrides and optoelectronics. Moreover, the in-depth discussions on the growth and characterization of a broad range of semiconductor nanostructures will benefit students and researchers working on nanomaterials, nanotechnology, and emerging devices

Table of Contents

  • Preface
  • Part I: AlGaN UV Optoelectronics
    • Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices
      • Abstract
      • 1 Introduction
      • 2 Doping Challenges of AlGaN Alloys
      • 3 Substrates for UV Optoelectronics
      • 4 Summary and Outlook
      • Acknowledgments
    • Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology
      • Abstract
      • 1 Introduction
      • 2 Epitaxial Growth of AlN and AlGaN Alloys
      • 3 Optical Properties of AlGaN
      • 4 UV LED Device Design and Performance
      • 5 Conclusions
      • Acknowledgments
    • Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
      • Abstract
      • 1 Introduction
      • 2 Research Background of DUV LEDs
      • 3 Growth of High-Quality AlN on Sapphire Substrate
      • 4 Increase in IQE
      • 5 222–351 nm AlGaN and InAlGaN DUV LEDs
      • 6 Increase in EIE by MQB
      • 7 Future LED Design for High LEE
      • 8 Summary
    • Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
      • Abstract
      • 1 Introduction
      • 2 MOCVD Growth of III-N DUV Materials and Heterostructures
      • 3 III-N Device Design and Simulation
      • 4 Processing of III-N DUV Emitters and Photodetectors
      • 5 Performance of III-N DUV Lasers and Photodetectors
      • 6 III-N DUV Photodetectors
      • 7 Conclusions
      • Acknowledgments
    • Chapter Five: Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics
      • Abstract
      • 1 Introduction
      • 2 Growth and Characterization of Al(Ga)N Nanowires
      • 3 Al(Ga)N Nanowire LEDs
      • 4 Electrically Injected Lasers with Ternary AlGaN Nanowires
      • 5 Other Devices and Applications with Al(Ga)N Nanowires
      • 6 Conclusion
  • Part II: InGaN Nanostructures: Epitaxy, Properties, and Emerging Device Applications
    • Chapter Six: Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires
      • Abstract
      • 1 Introduction
      • 2 Nucleation and Polarity
      • 3 From Nucleation to Steady-State Growth: The Issue of Nuclei Ripening
      • 4 Structural Properties of GaN NWs
      • 5 Conclusion
    • Chapter Seven: Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
      • Abstract
      • 1 Introduction
      • 2 SAG of InGaN/GaN NCs on GaN/Sapphire Templates
      • 3 SAG of InGaN/GaN Core–Shell Micropillars
      • 4 SAG of InGaN/GaN NCs on Silicon
      • 5 Summary and Conclusions
      • Acknowledgments
    • Chapter Eight: InN Nanowires: Epitaxial Growth, Characterization, and Device Applications
      • Abstract
      • 1 Introduction
      • 2 Growth and Synthesis of InN Nanowires
      • 3 Electrical and Optical Properties of n-Type Degenerate InN Nanowires
      • 4 Electrical and Optical Properties of Intrinsic InN Nanowires
      • 5 p-Type InN Nanowires
      • 6 On the Surface Charge Properties of InN
      • 7 InN Nanowire Devices and Applications
      • 8 Summary
    • Chapter Nine: Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System
      • Abstract
      • 1 Introduction
      • 2 Development of Dynamic-ALEp in Highly Mismatched InN/GaN System
      • 3 III-N Ordered Alloys Grown by Dynamic-ALEp
      • 4 Summary
      • Acknowledgments
    • Chapter Ten: Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications
      • Abstract
      • 1 Introduction
      • 2 Advantages of Nanorod/Nanowire Heterostructures
      • 3 Polarization Effects
      • 4 Nanorod/Nanowire Growth and Polarity Control
      • 5 Doping and Surface Properties
      • 6 III-Nitride Nanorod Heterojunction Band Alignments
      • 7 Disk-in-Rod Nanorod Heterostructures as Full-Color Light Emitters
      • 8 Tunable White LEDs Based on Disk-in-Rod Nanorod Heterostructures
      • 9 Green and Full-Color Core–Shell Nanorod Plasmonic Lasers
      • 10 Conclusions and Outlook
      • Acknowledgments
    • Chapter Eleven: III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon
      • Abstract
      • 1 Introduction
      • 2 Molecular Beam Epitaxy (MBE) of III-Nitride Nanowires on (001) Silicon
      • 3 Fabrication of Nanowire Waveguides and Electrically Pumped Edge-Emitting Visible Lasers on (001) Silicon
      • 4 Mode Confinement and Propagation in Nanowire Lasers
      • 5 Characteristics of Visible Nanowire Lasers
      • 6 Electrically Pumped 1.3 μm Disk-in-Nanowire Lasers on Silicon
      • 7 Conclusion
    • Chapter Twelve: Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon
      • Abstract
      • 1 Introduction to Photonics
      • 2 Background
      • 3 Cubic Gallium Nitride
      • 4 Future Prospects of Cubic GaN Materials
      • 5 Conclusion
      • Acknowledgments
  • Index
  • Contents of Volumes in this Series

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